[SIM2D-12] Simulate persistence Created: 16/Jul/14 Updated: 27/Mar/21 Resolved: 27/Mar/21 |
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| Status: | Won't Fix |
| Project: | DRP 2-D Simulator |
| Component/s: | None |
| Affects Version/s: | None |
| Fix Version/s: | None |
| Type: | Story | Priority: | Major |
| Reporter: | rhl | Assignee: | Unassigned |
| Resolution: | Won't Fix | Votes: | 0 |
| Labels: | None | ||
| Remaining Estimate: | Not Specified | ||
| Time Spent: | Not Specified | ||
| Original Estimate: | Not Specified | ||
| Issue Links: |
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| Epic Link: | H4RG simulation | ||||||||||||||||
| Description |
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HgCdTe devices usually show significant persistence from one exposure to the next. Model this in the simulator. |
| Comments |
| Comment by price [ 27/Mar/21 ] |
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We've agreed not to improve the n arm simulations. |